منابع مشابه
Graphene synthesis by ion implantation.
We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electric...
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بیمه گران همیشه بابت خسارات بیمه نامه های تحت پوشش خود نگران بوده و روش هایی را جستجو می کنند که بتوانند داده های خسارات گذشته را با هدف اتخاذ یک تصمیم بهینه مدل بندی نمایند. در این پژوهش توزیع های فیزتایپ در مدل بندی داده های خسارات معرفی شده که شامل استنباط آماری مربوطه و استفاده از الگوریتم em در برآورد پارامترهای توزیع است. در پایان امکان استفاده از این توزیع در مدل بندی داده های گروه بندی ...
Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation
We describe here the characteristics of two types of high-quality PbTe p-njunctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of these PbTe diodes. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics have been...
متن کاملLimits of composition achievable by ion implantation
In high-dose ion implantation for materials modification, the maximum concentration of the implanted species is determined by ion-induced erosion (sputtering) of the implanted layer. In this review, we consider the influence of preferential sputtering and atomic mixing. The maximum concentration of the implanted species is given roughly by r IS and extends over a depth W where S is the sputteri...
متن کاملCadmium chalcogenides nanowires obtained in ion track templates
Metal chalcogenide semiconductor nanowires are of particular interest for several reasons. First, II-VI semiconductors present a broad range of band gaps (from 0.15 eV in HgTe to 3.68 eV in ZnS). Second, most of them have direct energy gaps making them particularly important for electro-luminescence devices. Third, these kinds of semiconductors can be electrochemically deposited from aqueous so...
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2014
ISSN: 2041-1723
DOI: 10.1038/ncomms6346